MJE2955T

GeneralPurposeandSwitchingApplications

GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGainBandwidthProduct:fT=2MHz(Min.)

MJE2955T

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS75WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc

MJE2955T

POWERTRANSISTORS(10A,60V,75W)

COMPLEMENTARYSILICONPOWERTRANSISTORS.

MJE2955T

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES

MJE2955T

TO-220-PowerTransistorsandDarlingtons

MJE2955T

SiliconPNPPowerTransistorsMJE2955T

DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE3055T ·DCcurrentgain-hFE=20–70@IC=-4Adc ·Collector–emittersaturationvoltage-VCE(sat)=-1.1Vdc(Max)@IC=-4Adc APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifierapplications.

MJE2955T

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeamplifierandswitchingapplications. Pinning 1=Base 2=Collector 3=Emitter

MJE2955T

ComplementarySiliconPlasticPowerTransistors

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS−75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingapplications. Features •DCCurrentGainSpecifiedto10A •HighCurrentGain−BandwidthProduct−fT=2.0MHz(Min

MJE2955T

ComplementarySiliconPowerTtransistors

DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.

MJE2955T

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE3055T ·DCcurrentgain-hFE=20–70@IC=-4Adc ·Collector–emittersaturationvoltage-VCE(sat)=-1.1Vdc(Max)@IC=-4Adc APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifierapplications.