i.MX RT1170 Crossover Processors Data Sheet for Consumer Products

The i.MX RT1170 processors are based on Arm Cortex®-M7 Core™ Platform, which has the following features: • The Arm Cortex-M7 Core Platform: — 32 KB L1 Instruction Cache and 32 KB L1 Data Cache — Floating Point Unit (FPU) with single-precision and double-precision support of Armv7-M Architectu

文件：2.96667 Mbytes 页数：131 Pages

恩XP

Complementary Darlington Power Transistors

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications

文件：147.74 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Lin

文件：84.64 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. • Low Collector-Emitter Saturation Voltage. • Straight Lead (IPAK, L Suffix) • Complementary to MJD112/L.

文件：394.75 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司