包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD DEV EASY GSM/GPRS SIEMENS

mikroElektronika

包装：散装 功能：串行转 USB 类别：开发板，套件，编程器 评估板 - 扩展板，子卡 描述：RADIOSTATION CLICK

mikroElektronika

包装：盒 类别：开发板，套件，编程器 配件 描述：THERMOCOUPLE TYPE-J GLASS BRAID

mikroElektronika

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

文件：142.3 Kbytes 页数：11 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power ó 10 Watts PEP Power Gain ó 10.5 dB

文件：299.22 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

文件：142.3 Kbytes 页数：11 Pages

Motorola

摩托罗拉