MIC4120中文资料6 A MOSFET Gate Driver数据手册Microchip规格书

描述 Description

MIC4120 and MIC4129 MOSFET Gate drivers are tough, efficient, and easy to use. The MIC4129 is an inverting MOSFET Gate driver, while the MIC4120 is a non-inverting driver. The MIC4120 and MIC4129 are improved versions of the MIC4420 and MIC4429. They are capable of 6 A (peak) output and can drive the largest MOSFETs with an improved safe operating margin. The MIC4120/4129 accept any logic input from 2.4 V to VS without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5 V without damaging the part. Additional circuits protect against damage from electrostatic discharge. MIC4120/4129 drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost. Modern BiCMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability insures adequate gate voltage to the MOSFET during power up/down sequencing.

特性 Features

• CMOS construction
• Latch-up protected: will withstand > 200 mA reverse output current
• Logic input withstands negative swing of up to 5 V
• Matched rise and fall times of 25 ns
• High peak output current at 6 A
• Wide operating range from 4.5 V to 20 V
• High capacitive load drive of 10,000 pF
• Low delay time of 55 ns typical
• Logic high input for any voltage from 2.4 V to VS
• Low equivalent input capacitance (typical) at 6 pF
• Low supply current is 450 µA with logic 1 input
• Low output impedance is 2.5 Ω
• Output voltage swing within 25 mV of ground or VS
• Exposed backside pad packaging reduces heat
• ePad SOIC-8L (θJA = 58°C/W)

简介

MIC4120属于集成电路（IC）的栅极驱动器。由制造生产的MIC4120栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。