921 MHz-960 MHz SiFET RF Integrated Power Amplifier

文件：337.88 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

921 MHz--960 MHz SiFET RF Integrated Power Amplifier

文件：770.78 Kbytes 页数：12 Pages

恩XP

921 MHz - 960 MHz SiFET RF Integrated Power Amplifier

文件：222.88 Kbytes 页数：12 Pages

Motorola

摩托罗拉

960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit

Overview The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Our newest High Voltage (26 Volts) LDMOS IC technology, and contains a three-stage amplifier. Target applications include macrocell (driver function) and microcell base stations (final stage). The device is in a PFP \n•Typical GSM Performance: VDD = 26 Volts, IDQ = 150 mA, \nPout = 10 Watts, Full Frequency Band (921–960 MHz)\nPower Gain: 39 dB (Typ)\n\tPower Added Efficiency: 48% (Typ)\n\n•Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 10 Watts CW Output Power\n\n•Stable into a 10:1 VSWR. All Spurs Below;

恩XP

960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit

Overview Replaced by MHVIC910HNR2. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses 恩XP® Semiconductors's newest High Voltage (26 Volts) LDMOS IC technology, and c \n•Typical GSM Performance @ Full Frequency Band (921 – 960 MHz), 26 Volts\n    Output Power: 40 dBm (CW) @ P1dB\n    Power Gain: 39 dB @ P1dB\n    Efficiency: 48% @ P1dB\n\n•Integrated ESD Protection\n\n•Usable Frequency Range — 921 to 960 MHz\n\n•In Tape and Reel. R2 Suffix = 1,500 Units per 1;

恩XP