2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier

OverviewMHL21336NN removed from active portfolio. Possible Replacement Part: None. \n•Third Order Intercept: 45 dBm Typ\n\n•Power Gain: 31 dB Typ (@ f = 2140 MHz)\n\n•Input VSWR ≤ 1.5:1\n\n•Excellent Phase Linearity and Group Delay Characteristics\n\n•Ideal for Feedforward Base Station Applications\n\n•RoHS Compliant;

恩XP

3G Band RF Linear LDMOS Amplifier

文件：129.84 Kbytes 页数：6 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

3G BAND RF LINEAR LDMOS AMPLIFIER

文件：318.44 Kbytes 页数：4 Pages

Motorola

摩托罗拉

3G Band RF Linear LDMOS Amplifier

文件：109.88 Kbytes 页数：5 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体