3G BAND RF LINEAR LDMOS AMPLIFIER

文件：318.44 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

2110-2170 MHz, 3.0 W, 26 V, 31 dB 3G Band RF Linear LDMOS Amplifier

Overview Replaced by MHL21336N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. The MHL21336 is designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band \n•Third Order Intercept: 45 dBm Typ\n\n\n•Power Gain: 31 dB Typ (@ f = 2140 MHz)\n\n\n•Excellent Phase Linearity and Group Delay Characteristics\n\n\n•Ideal for Feedforward Base Station Applications;

恩XP

3G Band RF Linear LDMOS Amplifier

文件：109.88 Kbytes 页数：5 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

3G Band RF Linear LDMOS Amplifier

文件：129.84 Kbytes 页数：6 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier

OverviewMHL21336N removed from active portfolio. Possible Replacement Part: None. \n•Third Order Intercept: 45 dBm Typ\n\n•Power Gain: 31 dB Typ (@ f = 2140 MHz)\n\n•Input VSWR ≤ 1.5:1\n\n•Excellent Phase Linearity and Group Delay Characteristics\n\n•Ideal for Feedforward Base Station Applications\n\n•N Suffix Indicates Lead-Free Terminations;

恩XP

2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier

OverviewMHL21336NN removed from active portfolio. Possible Replacement Part: None. \n•Third Order Intercept: 45 dBm Typ\n\n•Power Gain: 31 dB Typ (@ f = 2140 MHz)\n\n•Input VSWR ≤ 1.5:1\n\n•Excellent Phase Linearity and Group Delay Characteristics\n\n•Ideal for Feedforward Base Station Applications\n\n•RoHS Compliant;

恩XP