霍尔传感器

• 低功耗CMOS工艺\n• 超低功耗，2.5uA@1.8V\n• 单极输出\n• 工作温度范围：-40℃ ~ +85℃\n• SOT553封装 ;

Memsic

美新半导体

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

文件：228.62 Kbytes 页数：4 Pages

MOSPEC

统懋

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

文件：172.52 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon epitaxial planar, complementary transistors in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY

文件：54.26 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体