Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600V IGBT technology is specifically suited for applications requiring both a

文件：152.61 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600V IGBT technology is specifically suited for applications requiring both a

文件：152.75 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Insulated Gate Bipolar Transistor

ONSEMI

安森美半导体

iscN-Channel MOSFET Transistor

文件：319.87 Kbytes 页数：2 Pages

ISC

无锡固电

EF Series Power MOSFET with Fast Body Diode

文件：186.66 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

EF Series Power MOSFET with Fast Body Diode

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for de

文件：167.73 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司