EF Series Power MOSFET with Fast Body Diode

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for de

文件：167.73 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET with Fast Body Diode

文件：186.66 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

文件：319.87 Kbytes 页数：2 Pages

ISC

无锡固电

EF Series Power MOSFET with Fast Body Diode

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for de

文件：167.73 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET with Fast Body Diode

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for de

文件：167.73 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET with Fast Body Diode

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for de

文件：167.73 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET with Fast Body Diode

·Fast body diode MOSFET using E series technology\n·Reduced trr, Qrr, and IRRM\n·Low figure-of-merit (FOM): Ron x Qg;

Vishay

威世