SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

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MITSUBISHI

三菱电机

SUPER LOW MOISE InGaAs HEMT

文件：198.33 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Surge Clamping, Transient Overvoltage Suppressor Bidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

文件：26.12 Kbytes 页数：2 Pages

NTE

SMA Male Right Angle Connector Solder Attachment For PE-034SR

文件：213.27 Kbytes 页数：2 Pages

PASTERNACK

SMPS - IC with SIPMOS Driver Output

Functional Description The versatile switch-mode power supply ICs for the direct control of SIPMOS power transistors comprise digital and analog functions. These functions are required for the design of high-quality flyback and forward converters during single-phase and push-pull operation in nor

文件：732.02 Kbytes 页数：21 Pages

SIEMENS

西门子