丝印：MDP20N116；Package：TO-220；Single N-channel Trench MOSFET 200V 11.6mΩ 95A

FEATURES • MV MOSFET GEN3T technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% UIS and Rg tested • Maximum 175°C junction temperature APPLICATIONS • DC/DC and AC/DC converters • Brushed and BLDC Motor drive systems • Battery powered systems

文件：621.85 Kbytes 页数：8 Pages

MGCHIP

丝印：MDP20N116；Package：TO-220；Single N-channel Trench MOSFET 200V 11.6mΩ 95A

FEATURES • MV MOSFET GEN3T technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% UIS and Rg tested • Maximum 175°C junction temperature APPLICATIONS • DC/DC and AC/DC converters • Brushed and BLDC Motor drive systems • Battery powered systems

文件：621.85 Kbytes 页数：8 Pages

MGCHIP