MD8IC925N

728-960 MHz，2.5 W平均值，28 V单W-CDMA LDMOS宽带射频集成功率放大器; • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n• On-Chip Matching (50 Ohm Input, DC Blocked)\n• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n• Integrated ESD Protection\n• Designed for Digital Predistortion Error Correction Systems\n• Optimized for Doherty Applications\n• 225°C Capable Plastic Package\n• RoHS Compliant\n• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.\n;

The MD8IC925NR1 and MD8IC925GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 728 to 960 MHz. This multi-stage structure is rated for 24 to 32 volt operation and covers all typical cellular base station modulation formats.

恩XP

MD8IC925N

RF LDMOS Wideband Integrated Power Amplifiers

ETC

MD8IC925NR1

RF LDMOS Wideband Integrated Power Amplifiers

ETC