RF LDMOS Wideband Integrated Power Amplifiers

文件：813.34 Kbytes 页数：22 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

文件：813.34 Kbytes 页数：22 Pages

恩XP

728-960 MHz，2.5 W平均值，28 V单W-CDMA LDMOS宽带射频集成功率放大器

The MD8IC925NR1 and MD8IC925GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 728 to 960 MHz. This multi-stage structure is rated for 24 to 32 volt operation and covers all typical cellular base station modulation formats. • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n• On-Chip Matching (50 Ohm Input, DC Blocked)\n• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n• Integrated ESD Protection\n• Designed for Digital Predistort;

恩XP

SMD

KOHERelec(科或)

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模块

四凌

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