RF LDMOS Wideband Integrated Power Amplifier

文件：407.52 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：512.62 Kbytes 页数：17 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifier

文件：407.37 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：512.62 Kbytes 页数：17 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

850-940 MHz，35 W平均值，28 V LDMOS宽带射频集成功率放大器

The MD8IC970NR1 and MD8IC970GNR1 wideband integrated circuits are designed with on-chip prematching that make them usable from 136 to 940 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats. These devices have a 2-stage design w • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n• On-Chip Prematching. On-Chip Stabilization.\n• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n• Integrated ESD Protection\n• 225°C Capable Plastic Package\n;

恩XP

恩智浦