2110-2170 MHz，32 W平均值，28 V单W-CDMA LDMOS射频宽带集成功率放大器

The MD7IC21100NR1, MD7IC21100GNR1 and MD7IC21100NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 2110 to 2170 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1A + IDQ1B = 190 mA, IDQ2A + IDQ2B = 925 mA, Pout = 32 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth= 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.Power Gain: 28.5 dBPower Added Efficiency: ;

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HV7 2100MHZ TO272WB14

The MD7IC21100NR1, MD7IC21100GNR1 and MD7IC21100NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 2110 to 2170 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1A + IDQ1B = 190 mA, IDQ2A + IDQ2B = 925 mA, Pout = 32 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth= 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.Power Gain: 28.5 dBPower Added Efficiency: ;

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