MI-271-MX

50-100WATTSMILITARYCOTSDC/DCCONVERTER

50-100WATTSMILITARYCOTSDC/DCCONVERTER Features •28VdcInputsperMIL-STD-704D/E/F •155VdcInputsperMIL-STD-1399A •270VdcInputsperMIL-STD-704D/E/F •MIL-STD-810environments •OVPandThermalshutdown •Powerboostersforhigherpower •LownoiseFMcontrol

MI-271-MY

MilitaryDC-DCConverters50to100W

MilitaryDC-DCConverters50to100W Features Inputs: 28VdcperMIL-STD-704D/E 155VdcperMIL-STD-1399A 270VdcperMIL-STD-704D/E Singleoutput:2–48Vdc Upto23W/in3 MIL-STD-810environments Upto90efficiency Remotesense Currentlimit OVPa

MI-271-MY

MilitaryDC-DCConverters50to100W

ProductHighlights TheMI-SeriesisdesignedformilitaryapplicationsandisbasedonVicor’s1stGenerationfamilyofzero-current/zero-voltageswitching,componentlevelDC-DCconverters.Operatingatfrequenciesinexcessof1MHz,theMI-Seriesoffersstate-of-the-artperformanceintermsof

MI-271-MY

50-100WATTSMILITARYCOTSDC/DCCONVERTER

50-100WATTSMILITARYCOTSDC/DCCONVERTER Features •28VdcInputsperMIL-STD-704D/E/F •155VdcInputsperMIL-STD-1399A •270VdcInputsperMIL-STD-704D/E/F •MIL-STD-810environments •OVPandThermalshutdown •Powerboostersforhigherpower •LownoiseFMcontrol

MJE271

2.0AMPERECOMPLEMENTARYPOWERDARLINGTONTRANSISTORS100VOLTS15WATTS

ComplementarySiliconPowerTransistors ...designedspecificallyforusewiththeMC3419Solid–StateSubscriberLoopInterfaceCircuit(SLIC). •HighSafeOperatingArea IS/B@40V,1.0s=0.375A—TO–126 •Collector–EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDC

MJE271

2.0AMPERECOMPLEMENTARYPOWERDARLINGTONTRANSISTORS100VOLTS,15WATTS

ComplementarySiliconPowerTransistors Features •HighSafeOperatingArea IS/B@40V,1.0s=0.375A •Collector−EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDCCurrentGain hFE@120mA,10V=1500(Min) •Pb−FreePackagesareAvailable*

MJE271

NPNPLASTICPOWERTRANSISTOR

MJE270NPNPLASTICPOWERTRANSISTOR MJE271PNPPLASTICPOWERTRANSISTOR MediumPowerDarlingtonsforLinearandSwitchingApplications

MJE271

PLASTICPOWERTRANSISTOR

MJE271G

2.0AMPERECOMPLEMENTARYPOWERDARLINGTONTRANSISTORS100VOLTS,15WATTS

ComplementarySiliconPowerTransistors Features •HighSafeOperatingArea IS/B@40V,1.0s=0.375A •Collector−EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDCCurrentGain hFE@120mA,10V=1500(Min) •Pb−FreePackagesareAvailable*

MJE271G

ComplementarySiliconPowerTransistors

ComplementarySiliconPowerTransistors Features •HighSafeOperatingArea IS/B@40V,1.0s=0.375A •Collector−EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDCCurrentGain hFE@120mA,10V=1500(Min) •TheseDevicesarePb−FreeandareRoHSCompliant*