QPA1315

15.4–17.7GHz35WattGaNPowerAmplifier

KeyFeatures •FrequencyRange:15.4–17.7GHz •PSAT(PIN=24dBm):45.5dBm •PAE(PIN=24dBm):20% •PowerGain(PIN=24dBm):21dB •SmallSignalGain:25dB •Bias:PulsedVD=26V,IDQ=640mA,VG=-2.5Vtyp. Range,PW=100uS,DC=10% •PackageDimensions:15.2

QPA1315EVB

15.4–17.7GHz35WattGaNPowerAmplifier

KeyFeatures •FrequencyRange:15.4–17.7GHz •PSAT(PIN=24dBm):45.5dBm •PAE(PIN=24dBm):20% •PowerGain(PIN=24dBm):21dB •SmallSignalGain:25dB •Bias:PulsedVD=26V,IDQ=640mA,VG=-2.5Vtyp. Range,PW=100uS,DC=10% •PackageDimensions:15.2

RB1315

RadialPowerChoke

RN1315

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •ComplementarytoRN2314~RN2318

RP1315

PowerInductorPINType:RP>Series>

◆ProductDescription ◾13.0mmMax.φ,15.0mmMax.Height. ◾InductanceRange:10μH～33μH ◾RatedCurrentRange:2.3～4.5A(RP135),2.8～6.2A(RP135B) ◾Inadditiontothestandardversionsofinductorsshownhere,custominductorsareavailabletomeetyourexactrequirements ◆Feature ◾Ma

RP1315

POWERINDUCTORS>Type>

◆ProductDescription ◾13.0mmMax.φ,15.0mmMax.Height. ◾InductanceRange:10μH～33μH ◾RatedCurrentRange:2.3～4.5A(RP135),2.8～6.2A(RP135B) ◾Inadditiontothestandardversionsofinductorsshownhere,custominductorsareavailabletomeetyourexactrequirements ◆Feature ◾Ma

RP1315B

PINPowerInductor

◆ProductDescription ◾13.0mmMax.φ,15.0mmMax.Height. ◾InductanceRange:10μH～33μH ◾RatedCurrentRange:2.3～4.5A(RP135),2.8～6.2A(RP135B) ◾Inadditiontothestandardversionsofinductorsshownhere,custominductorsareavailabletomeetyourexactrequirements ◆Feature ◾Ma

S1315

LOWCURRENTCONSUMPTIONOUTPUTCAPACITOR-LESS

S-1315

5.5VINPUT,200mA,OUTPUTCAPACITOR-LESSVOLTAGEREGULATOR

SI1315DL

P-Channel8V(D-S)MOSFET