15.4 – 17.7 GHz 35 Watt GaN Power Amplifier

Key Features • Frequency Range: 15.4 – 17.7 GHz • PSAT (PIN = 24 dBm): 45.5 dBm • PAE (PIN = 24 dBm): 20 % • Power Gain (PIN = 24 dBm): 21 dB • Small Signal Gain: 25 dB • Bias: Pulsed VD = 26 V, IDQ = 640 mA, VG = -2.5 V typ. Range, PW = 100 uS, DC = 10% • Package Dimensions: 15.2

文件：1.63528 Mbytes 页数：30 Pages

QORVO

威讯联合

15.4 - 17.7 GHz 35 Watt GaN Power Amplifier

Qorvo's QPA1315 is a packaged high power MMIC amplifier, Ku-K band, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15).  QPA1315 is targeted for 15.4 - 17.7 GHz band.  It provides 35 W of saturated output power with 21 dB of large signal gain while achieving 20% power-added eff • Frequency Range: 15.4 - 17.7 GHz\n• PAE (PIN = 24 dBm): 20%\n• Small Signal Gain: 25 dB\n• Package Dimensions: 15.2 x 15.2 x 3.5 mm\n• Package base is pure Cu offering superior thermal management.;

Qorvo

威讯联合

15.4 – 17.7 GHz 35 Watt GaN Power Amplifier

Key Features • Frequency Range: 15.4 – 17.7 GHz • PSAT (PIN = 24 dBm): 45.5 dBm • PAE (PIN = 24 dBm): 20 % • Power Gain (PIN = 24 dBm): 21 dB • Small Signal Gain: 25 dB • Bias: Pulsed VD = 26 V, IDQ = 640 mA, VG = -2.5 V typ. Range, PW = 100 uS, DC = 10% • Package Dimensions: 15.2

文件：1.63528 Mbytes 页数：30 Pages

QORVO

威讯联合

Radial Power Choke

文件：308.51 Kbytes 页数：1 Pages

ALLIED

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN2314~RN2318

文件：271.08 Kbytes 页数：8 Pages

TOSHIBA

东芝

POWER INDUCTORS >Type>

◆ Product Description ◾ 13.0mm Max. φ, 15.0mm Max. Height. ◾ Inductance Range: 10μ H～33μ H ◾ Rated Current Range : 2.3～ 4.5A(RP135), 2.8～ 6.2A(RP135B) ◾ In addition to the standard versions of inductors shown here, custom inductors are available to meet your exact requirements ◆ Feature ◾ Ma

文件：166.94 Kbytes 页数：2 Pages

SUMIDA

胜美达