MCM64Z834数据手册恩XP中文资料规格书

描述 Description

Overview The ZBT® RAM is an 8M–bit synchronous fast static RAM designed to provide Zero Bus Turnaround® . The ZBT® RAM allows 100% use of bus cycles during back–to–back read/write and write/read cycles. The MCM64Z834 (organized as 256K words by 36 bits) and the MCM64Z916 (organized as 512K words by 18 bits) are fabricated in NXP’s high performance silicon gate CMOS tech-nology. This device integrates input registers, an output register, a 2–bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in communication applications. Synchronous design allows precise cycle control with the use of an external positive–edge–triggered clock (CK). CMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability.

特性 Features

Pipelined or flow-through
with
back-to-back
read/write
write/read
cycles.