PHD50N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHD50N03LTA

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

PHP50N03LT

N-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •Packagewithlowthermalresistance •100RgandUIStested

PHP50N03LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance •Logiclevel

PHP50N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHP50N03T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa

PHP50N03T

N-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •Packagewithlowthermalresistance •100RgandUIStested

PJS50N03

30VN-CHANNELENHANCEMENTMODEMOSFET

SDD50N03L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

SDD50N03L

N-Channel30-V(D-S)MOSFET