Chassis Mounting Transformers

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ETCList of Unclassifed Manufacturers

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1.9 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

This two–stage class AB monolithic GaAs amplifier in a low–cost 16 lead plastic package is designed for output or driver applications in 1.9 GHz PCS handsets and basestations. The design is optimized for 3.0 Volt operation in systems such as Japan’s PHS, Europe’s DECT and the emerging North Americ

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Motorola

摩托罗拉

NUT, SELF-LOCKING, EXTENDED WASHER, BOUBLE HEXAGON, CRES, 180KSI, 450쨘F and 800쨘F

文件：705.78 Kbytes 页数：3 Pages

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1805S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =185V,ID =5A RDS(ON)

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NCEPOWER

新洁能