首页 >MCFRFTDV3904>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPNGeneralPurposeAmplifier Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR 40VNPNSMALLSIGNALTRANSISTORINSOT23 Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT3906) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Devic | DIODES Diodes Incorporated | DIODES | ||
SmallSignalTransistors(NPN) FEATURES ◆NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ◆Ascomplementarytype,thePNP transistorMMBT3906isrecommended. ◆ThistransistorisalsoavailableintheTO-92 casewiththetypedesignation2N3904. | GE GE Industrial Company | GE | ||
NPNGeneralPurposeAmplifier Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Capableof350mWattsofPowerDissipationand200mAIc. •OperatingandStorageJunctionTemperatures:-55°Cto150°C •SurfaceMountSOT-23Package •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable (MMBT3906) •IdealforMediumPowerAmplificationand Switching | TRSYS Transys Electronics | TRSYS | ||
GENERALPURPOSETRANSISTORNPNSILICON GeneralPurposeTransistor NPNSilicon | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | ZOWIE | ||
GENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT GeneralPurposeTransistors NPNandPNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−323/SC−70packagewhichisdesignedforlowpowersurfacemountapplications. Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAut | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNSiliconSwitchingTransistor NPNSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage •Complementarytypes:SMBT3906...MMBT3906 •SMBT3904S:Fororientat | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
GeneralPurposeTransistorNPNSilicon GeneralPurposeTransistor NPNSilicon P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
GENERALPURPOSEAPPLIATION GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906 | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
NPNGeneralPurposeAmplifier | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
SMDGeneralPurposeTransistor(NPN) SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications •RoHScompliance | TAITRON Taitron | TAITRON | ||
NPNSWITCHINGTRANSISTOR FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable (MMBT3906). ●CollectorCurrentCapabilityICM=200mA. ●Collector-emitterVoltageVCEO=40V. APPLICATIONS ●Generalswitchingandamplification | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
NPNGENERALPURPOSESWITCHINGTRANSISTOR FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest | PANJITPan Jit International Inc. 强茂強茂股份有限公司 | PANJIT | ||
0.2WattsNPNPlastic-EncapsulateTransistors FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free) | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
NPNSiliconGeneralPurposeTransistor NPNSiliconGeneralPurposeTransistor forswitchingandamplifierapplications. AscomplementarytypesthePNPtransistors MMBT3906isrecommended. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC | ||
NPNGeneralPurposeAmplifier | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN) | RECTRON Rectron Semiconductor | RECTRON | ||
NPNGeneralPurposeAmplifier Thisdeviceisdesignedasageneralpurposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | PFSShenzhen Ping Sheng Electronics Co., Ltd. 平盛电子深圳市平盛电子有限公司 | PFS | ||
NPNSiliconSwitchingTransistors | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MULTICOMP |
2022+ |
SMD |
80000 |
原厂代理 终端免费提供样品 |
询价 | ||
NXP/恩智浦 |
24+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
MULTICOMP |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
MULTICOMP |
23+ |
0402 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
MULTICOMP |
22+ |
SMD |
46800 |
原装现货样品可售 |
询价 |
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