MRF6414

RFPOWERTRANSISTORNPNSILICON

TheRFLine NPNSilicon RFPowerTransistor TheMRF6414isdesignedfor26voltUHFlargesignal,commonemitter,classABlinearamplifierapplications. •Specified26Volt,960MHzCharacteristics OutputPower=50Watts MinimumGain=8.5dB@960MHz,ClassAB MinimumEfficienc

MRF6414PHT

NPNSiliconRFPowerTransistor

TheRFLine NPNSilicon RFPowerTransistor

MTAN6414A-CHRG

Marktech1.405x8Bi−ColorDotMatrix

FEATURES ◾1.45x8bi-colordotmatrixdisplay ◾Greysurface/whiteepoxycolor

NTD6414AN

N-ChannelPowerMOSFET100V,32A,37m廓

Features •LowRDS(on) •HighCurrentCapability •100AvalancheTested •AECQ101Qualified−NVD6414AN •TheseDevicesarePb−FreeandareRoHSCompliant

NTD6414AN

N-ChannelPowerMOSFET

NTD6414AN

N-ChannelPowerMOSFET100V,32A,37m

Features •LowRDS(on) •HighCurrentCapability •100AvalancheTested •AECQ101Qualified−NVD6414AN •TheseDevicesarePb−FreeandareRoHSCompliant

NTD6414AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NVD6414AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NVD6414AN

N-ChannelPowerMOSFET100V,32A,37m

Features •LowRDS(on) •HighCurrentCapability •100AvalancheTested •AECQ101Qualified−NVD6414AN •TheseDevicesarePb−FreeandareRoHSCompliant

NX6414EH

LASERDIODE1490nmInGaAsPMQW-DFBLASERDIODEFORGIGABITETHERNETANDPointtoPointAPPLICATION

DESCRIPTION TheNX6414EHisa1490nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPIN-PD. FEATURES •OpticaloutputpowerPo=14.0mW •Lowthresholdcurrentlth=10mA •Differentialefficiencyηd=0.25W/A •Wideoperatingtemperat