VOICE SWITCHED SPEAKERPHONE CIRCUIT

VOICE SWITCHED SPEAKERPHONE CIRCUITThe MC34018 Speakerphone intergrated circuit incorporates the neccessry amlifiers, attenuators, and control fuctions to produce a high quality hands-free speakerphone system.

恩XP

恩智浦

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

DESCRIPTION NECs NE34018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size a

文件：200.1 Kbytes 页数：10 Pages

CEL

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 2 GHz • High associated gain Ga = 16 dB TYP. at f = 2 GHz • Gate width: Wg = 400 μm • 4 pins super mini mold • Tape & reel packaging only available

文件：114.81 Kbytes 页数：16 Pages

NEC

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 mm • 4-pin super minimold package • Tape & reel packaging only available

文件：250.2 Kbytes 页数：18 Pages

RENESAS

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