首页 >MC33284P存储IC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SUPERLOWNOISEHJFET | CEL California Eastern Labs | CEL | ||
LtoXBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
LtoXBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SUPERLOWNOISEHJFET | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SUPERLOWNOISEHJFET | CEL California Eastern Labs | CEL | ||
SUPERLOWNOISEHJFET | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
LtoXBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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