PWR1303AC

1.5WattsUnregulatedDC/DCConverters

ROHSCOMPLIANT HIGHISOLATION-4000VRATING 8000VISOLATIONTESTVOLTAGE BARRIER100PRODUCTIONTESTED LOWBARRIERCAPACITANCE-10pF LOWLEAKAGECURRENT-2μAMAX 24-PINDIPPACKAGE INTERNALFILTERING

RN1303

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

RN1303

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuit andDriverCircuitApplications ●Withbuilt-inbiasresistors. ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN2301toRN2306

RSZ-1303

1WattSMDMiniatureIsolatedSingleOutput

RSZ-1303HP

1WattSMDMiniatureIsolatedSingleOutput

SHF1303

HYPERFASTRECOVERYRECTIFIER200-600VOLTS

Features: ●PIVTO600VOLTS ●HYPERFASTRECOVERY40NSECMAX ●VOIDLESSCONSTRUCTION ●FORHIGHEFFICIENCYAPPLICATIONS ●HERMETICALLYSEALED ●LOWFORWARDDROP1.35VOLTS ●LOWLEAKAGECURRENT10μA ●REPLACEUNITRODEUES1304SERIESWHEREFASTERtrrISREQUITED

SI1303DL

P-Channel2.5-V(G-S)MOSFET

SI1303DL

P-Channel2.5-V(G-S)MOSFET

P-Channel2.5-V(G-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •2.5VRated •ComplianttoRoHSDirective2002/95/EC

SI1303DL

P-Channel2.5-V(G-S)MOSFET

P-Channel2.5-V(G-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •2.5VRated •ComplianttoRoHSDirective2002/95/EC

SI1303EDL

P-Channel2.5-V(G-S)MOSFET

P-Channel2.5-V(G-S)MOSFET ESDProtected3000V