首页 >MC10170FN>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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HighvoltagepowerSchottkyrectifier Description ThisdualcentertabSchottkyrectifierissuitedfor highfrequencyswitchedmodepowersupplies. Features Highjunctiontemperaturecapability Goodtradeoffbetweenleakagecurrentand forwardvoltagedrop Lowleakagecurrent Avalanchecapabilityspecified ECOPA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
HighvoltagepowerSchottkyrectifier Description DualcentretabSchottkyrectifierdesignedforhighfrequencyswitchmodepowersupplies. Featuresandbenefits ■Highjunctiontemperaturecapability ■Goodtrade-offbetweenleakagecurrentandforwardvoltagedrop ■Lowleakagecurrent ■Avalanchecapabilityspe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
HighvoltagepowerSchottkyrectifier Description DualcentretabSchottkyrectifierdesignedforhighfrequencyswitchmodepowersupplies. Featuresandbenefits ■Highjunctiontemperaturecapability ■Goodtrade-offbetweenleakagecurrentandforwardvoltagedrop ■Lowleakagecurrent ■Avalanchecapabilityspe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
HighvoltagepowerSchottkyrectifier Description DualcentretabSchottkyrectifierdesignedforhighfrequencyswitchmodepowersupplies. Featuresandbenefits ■Highjunctiontemperaturecapability ■Goodtrade-offbetweenleakagecurrentandforwardvoltagedrop ■Lowleakagecurrent ■Avalanchecapabilityspe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIO | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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