High voltage power Schottky rectifier

Description Dual centre tab Schottky rectifier designed for high frequency switch mode power supplies. Features and benefits ■ High junction temperature capability ■ Good trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability spe

文件：135.04 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Package：TO-262-3，长引线，I²Pak，TO-262AA；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 170V I2PAK

STMICROELECTRONICS

意法半导体

High voltage power Schottky rectifier

Description Dual centre tab Schottky rectifier designed for high frequency switch mode power supplies. Features and benefits ■ High junction temperature capability ■ Good trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability spe

文件：135.04 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

文件：315.78 Kbytes 页数：2 Pages

ISC

无锡固电

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO

文件：106.6 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

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