MC-4R512FKE6D-653中文资料美光科技数据手册PDF规格书

描述 Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

MC-4R512FKE6D modules consists of sixteen 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588). These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.

特性 Features

• 184 edge connector pads with 1mm pad spacing

• 512 MB Direct RDRAM storage

• Each RDRAM® has 32 banks, for 512 banks total on module

• Gold plated contacts

• RDRAMs use Chip Scale Package (CSP)

• Serial Presence Detect support

• Operates from a 2.5 V supply

• Powerdown self refresh modes

• Separate Row and Column buses for higher efficiency

• Over Drive Factor (ODF) support