丝印：MBRF20150CT；Package：ITO-220AB；20A High Power Schottky Barrier Rectifiersnull

■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part,

文件：99.88 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBRF20150CT；Package：ITO-220AB；SMD Schottky Barrier Rectifiers

Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla

文件：443.34 Kbytes 页数：3 Pages

COMCHIP

典琦

丝印：MBRF20150CT；Package：ITO-220AB；20A High Power Schottky Barrier Rectifiersnull

■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part,

文件：99.88 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBRF20150CT；Package：ITO-220AB；SMD Schottky Barrier Rectifiers

Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla

文件：443.34 Kbytes 页数：3 Pages

COMCHIP

典琦

20 Ampere Insulated Dual Common Cathode Schottky Half Bridge Rectifiers

Features ✧ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ✧ Metal silicon junction, majority carrier conduction ✧ Low power loss, high efficiency ✧ High current capability, low forward voltage drop ✧ High surge capability ✧ For use in low voltage, high freque

文件：415.67 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 150 to 200 Volts Forward Current -20.0 Amperes FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forwa

文件：661.29 Kbytes 页数：2 Pages

CHENDA

辰达半导体

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.48791 Mbytes 页数：2 Pages

SAMYANG

三阳电子

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

文件：1.43671 Mbytes 页数：2 Pages

SUNMATE

森美特

MBRF20150CT SCHOTTKY RECTIFIER

Features 175C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

文件：192.36 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

TO-220F Plastic-Encapsulate Diodes

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling

文件：1.08206 Mbytes 页数：2 Pages

TGS