丝印：MBRF20100CT；Package：ITO-220AB；20A High Power Schottky Barrier Rectifiersnull

■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part,

文件：99.88 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBRF20100CT；Package：ITO-220AB；SMD Schottky Barrier Rectifiers

Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla

文件：443.34 Kbytes 页数：3 Pages

COMCHIP

典琦

丝印：MBRF20100CT；Package：ITO-220AB；20A High Power Schottky Barrier Rectifiersnull

■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part,

文件：99.88 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBRF20100CT；Package：ITO-220AB；SMD Schottky Barrier Rectifiers

Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla

文件：443.34 Kbytes 页数：3 Pages

COMCHIP

典琦

丝印：B20100；Package：TO-220；SWITCHMODE Schottky Power Rectifier

The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 1

文件：79.21 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Dual High-Voltage Schottky Rectifiers

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage,

文件：113.41 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage,

文件：160.85 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please s

文件：128.53 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=20A. • Repetitive Peak Reverse Voltage : VRRM=100V. • Fast Reverse Recovery Time : trr=35ns.

文件：439.78 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

Product Specification

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction， positive center tap ● Metal of silicon rectifier， majority carrier conduction ● Low forward voltage， high efficiency ● Guarding for over voltage protection ● For use in

文件：320.66 Kbytes 页数：6 Pages

Good-Ark

固锝电子