SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.45871 Mbytes 页数：2 Pages

SAMYANG

三阳电子

肖特基二极管

SINEDEVICE

宇宏微

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.47521 Mbytes 页数：2 Pages

SAMYANG

三阳电子

Isolated 15.0AMP.Schottky Barrier Rectifiers

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

文件：272.3 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

15A, 45V - 200V Dual Common Cathode Schottky Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: ITO-220AB Mo

文件：265.64 Kbytes 页数：4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件：235.1 Kbytes 页数：4 Pages

TSC

台湾半导体

15.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：254.13 Kbytes 页数：3 Pages

TSC

台湾半导体

Isolated 15.0 AMPS. Schottky Barrier Rectifiers

文件：333.6 Kbytes 页数：2 Pages

TSC

台湾半导体

15.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：192.25 Kbytes 页数：2 Pages

TSC

台湾半导体

SCHOTTKY BARRIER RECTIFIERS

文件：110.18 Kbytes 页数：2 Pages

DSK