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MBRB10H100CT

Dual High-Voltage Schottky Rectifiers

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

文件:78.47 Kbytes 页数:3 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBRB10H100CT

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

文件:530.38 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBRB10H100CT

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

文件:162 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBRB10H100CT

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

文件:1.23717 Mbytes 页数:3 Pages

KERSEMI

MBRB10H100CT

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

文件:1.23716 Mbytes 页数:3 Pages

KERSEMI

MBRB10H100CT-E3/45

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

文件:530.38 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBRB10H100CT-E3/81

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

文件:530.38 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBRB10H100CT-E3SLASH45

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

文件:530.38 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBRB10H100CT-E3SLASH81

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

文件:530.38 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBRB10H100CTHE3/45

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

文件:530.38 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    MBRB10H100CT

  • 制造商:

    GENERAL

  • 制造商:

    GS

  • 功能描述:

    Rectifier Diode, Common Cathode, Schottky, 100 Volt, TO-263AB

供应商型号品牌批号封装库存备注价格
JINGDAO/晶导微
23+
SMA(DO-214AC)
69820
终端可以免费供样,支持BOM配单!
询价
24+
TO-263
65200
一级代理/放心采购
询价
VISHAY/威世
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
VISHAY
26+
SOT-89
86720
全新原装正品价格最实惠 承诺假一赔百
询价
VISHAY/威世
23+
TO-263
89630
当天发货全新原装现货
询价
VISHAY
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHA
2223+
TO-263
26800
只做原装正品假一赔十为客户做到零风险
询价
三年内
1983
只做原装正品
询价
VISHAY/威世
2022+
100
全新原装 货期两周
询价
VISHAY
25+
TO-263
3675
就找我吧!--邀您体验愉快问购元件!
询价
更多MBRB10H100CT供应商 更新时间2026-1-26 13:49:00