SWITCHMODE Schottky Power Rectifier Surface Mount Power Package

SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite

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ONSEMI

安森美半导体

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally sui

文件：165.47 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite

文件：79.77 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier, Switch-Mode, 10 A, 45 V

This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp

文件：268.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SWITCHMODE Schottky Power Rectifier Surface Mount Power Package

SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite

文件：83.67 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SCHOTTKY RECTIFIER

Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes,

文件：201.33 Kbytes 页数：7 Pages

IRF

Schottky Rectifier, 10 A

FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件：106.68 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

Schottky Rectifier, 10 A

DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and revers

文件：109.33 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

SCHOTTKY RECTIFIER

Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes,

文件：201.33 Kbytes 页数：7 Pages

IRF

SCHOTTKY RECTIFIER

Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes,

文件：201.33 Kbytes 页数：7 Pages

IRF