MBRAF2H100中文资料2.0 A，100 V，肖特基整流器数据手册ONSEMI规格书

描述 Description

This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

特性 Features

• Low Profile Package for Space Constrained Applications
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• 150°C Operating Junction Temperature
• Guard-Ring for Stress Protection
• These are Pb-Free and Halide-Free DevicesMechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94, V-0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds
• Cathode Polarity Band
• Device Meets MSL 1 Requirements
• ESD Ratings: Machine Model = C Human Body Model = 3B