SWITCHMODE Power Rectifier

These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guard−ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tem

文件：64.2 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Package：TO-218-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 45V SOT93

ONSEMI

安森美半导体

30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

Features * Standard MBR matured technology with high reliablity * Low forward voltage drop * High current capability * Low reverse leakage current * High surge current capability Application * Automotive Inverters/Solar Inverters * Plating Power Supply,SMPS and UPS * Car Audio Amplifiers

文件：948.78 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

SCHOTTKY BARRIER RECTIFIER

文件：1.03968 Mbytes 页数：3 Pages

YFWDIODE

佑风微

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw

文件：50.97 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉