丝印：MBR1035；Package：TO-2202L；Schottky Rectifiers

Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward-Voltage Drop • Guard Ring for Over-Voltage Protection (OVP) Applications • Low-Voltage • High-Frequency Inverters • Free Wheeling

文件：462.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：MBR1035CT；Package：TO-220AB；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：2.39945 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR1035；Package：TO-2202L；Schottky Rectifiers

Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward-Voltage Drop • Guard Ring for Over-Voltage Protection (OVP) Applications • Low-Voltage • High-Frequency Inverters • Free Wheeling

文件：462.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：MBR1035CT；Package：TO-220AB；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：2.39945 Mbytes 页数：3 Pages

RFE

RFE international

10A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Pro

文件：56.09 Kbytes 页数：2 Pages

DIODES

美台半导体

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

文件：234.97 Kbytes 页数：2 Pages

DSK

SWITCHMODE™ Power Rectifiers

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification • Power Management • Instrumentation Mechanical Cha

文件：180.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recogniti

文件：1.1711 Mbytes 页数：2 Pages

SAMYANG

三阳电子

SCHOTTKY RECTIFIER

Features 150℃ TJ operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are

文件：357.05 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS

Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep

文件：148.69 Kbytes 页数：6 Pages

Motorola

摩托罗拉