MBM29PL3200BE70中文资料富士通数据手册PDF规格书

DESCRIPTION

The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each or 1 M words of 32 bits each. The device is offered in 90-pin SSOP and 84-ball FBGA packages. This device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. (Continued

FEATURES

• 0.23 µm Process Technology

• Single 3.0 V read, program and erase

Minimized system level power requirements

• High Performance Page Mode

25 ns maximum page access time (70 ns random access time)

• 8 words Page ( × 16) /4 double words ( × 32) size

• Compatible with JEDEC-standard commands

Uses same software commands as E2PROMs

• Compatible with JEDEC-standard world-wide pinouts

90-pin SSOP (Package suffix : PFV)

84-ball FBGA (Package suffix : PBT)

• Minimum 100,000 program/erase cycles

• Sector erase architecture

One 16 K word, two 8 K words, one 96 K word, and fifteen 128 K words sectors in word mode ( × 16)

One 8 K double word, two 4 K double words, one 48 K double word, and fifteen 64 K double words sectors in double word mode ( × 32)

Any combination of sectors can be concurrently erased. Also supports full chip erase

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM Algorithms

Automatically programs and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switches themselves to low power mode

• Low VCC write inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read data and/or program in another sector within the same device

• Sector protection

Hardware method disables any combination of sectors from program or erase operations

• Fast Programming Function by Extended command

• Temporary sector unprotection

Temporary sector unprotection with the software command

• In accordance with CFI (Common Flash Memory Interface)