MBM29F040C-70PFTR中文资料FLASH MEMORY CMOS 4M (512K ×8) BIT数据手册Fujitsu规格书

描述 Description

■GENERAL DESCRIPTION
The MBM29F040C is a 4M-bit, 5.0 V-only Flash memory organized as 512K bytes of 8 bits each. The MBM29F040C is offered in a 32-pin PLCC and 32-pin TSOP(I) package. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 V VPPis not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F040C offers access times 55 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls.
The MBM29F040C is pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 V Flash or EPROM devices.■FEATURES
• Single 5.0 V read, program and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard byte-wide pinouts
   32-pin PLCC (Package suffix: PD)
   32-pin TSOP(I) (Package suffix: PF)
   32-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
• Minimum 100,000 write/erase cycles
• High performance 
  55 ns maximum access time
• Sector erase architecture
  8 equal size sectors of 64K bytes each Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Embedded Erase™ Algorithms
  Automatically pre-programs and erases the chip or any sector
• Embedded Program™ Algorithms
  Automatically writes and verifies data at specified address
• DataPolling and Toggle Bit feature for detection of program or erase cycle completion
• Low VCCwrite inhibit ≤3.2 V
• Sector protection
  Hardware method disables any combination of sectors from write or erase operations
• Erase Suspend/Resume
  Suspends the erase operation to allow a read data in another sector within the same device

特性 Features

• Single 5.0 V read, program and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard byte-wide pinouts
   32-pin PLCC (Package suffix: PD)
   32-pin TSOP(I) (Package suffix: PF)
   32-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
• Minimum 100,000 write/erase cycles
• High performance 
  55 ns maximum access time
• Sector erase architecture
  8 equal size sectors of 64K bytes each Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Embedded Erase™ Algorithms
  Automatically pre-programs and erases the chip or any sector
• Embedded Program™ Algorithms
  Automatically writes and verifies data at specified address
• DataPolling and Toggle Bit feature for detection of program or erase cycle completion
• Low VCCwrite inhibit ≤3.2 V
• Sector protection
  Hardware method disables any combination of sectors from write or erase operations
• Erase Suspend/Resume
  Suspends the erase operation to allow a read data in another sector within the same device