MBM29F016A

16M (2M X 8) BIT

■GENERALDESCRIPTION TheMBM29F016Aisa16M-bit,5.0V-OnlyFlashmemoryorganizedas2Mbytesof8bitseach.The2Mbytesofdataisdividedinto32sectorsof64Kbytesforflexibleerasecapability.The8bitofdatawillappearonDQ0toDQ7.TheMBM29F016Aisofferedina48-pinTSOP(

MBM29F016A

FLASH MEMORY CMOS 16M (2M x 8) BIT

MBM29F016A-12

16M (2M X 8) BIT

■GENERALDESCRIPTION TheMBM29F016Aisa16M-bit,5.0V-OnlyFlashmemoryorganizedas2Mbytesof8bitseach.The2Mbytesofdataisdividedinto32sectorsof64Kbytesforflexibleerasecapability.The8bitofdatawillappearonDQ0toDQ7.TheMBM29F016Aisofferedina48-pinTSOP(

MBM29F016A-12

FLASH MEMORY CMOS 16M (2M × 8) BIT; • Single 5.0 V read, write, and erase\n   Minimizes system level power requirements\n• Compatible with JEDEC-standard commands\n   Pinout and software compatible with single-power supply Flash\n   Superior inadvertent write protection\n• 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)\n• Minimum 100,000 write/erase cycles\n• High performance\n   70 ns maximum access time\n• Sector erase architecture\n   Uniform sectors of 64 K bytes each\n   Any combination of sectors can be erased. Also supports full chip erase.\n• Embedded Erase™ Algorithms\n   Automatically pre-programs and erases the chip or any sector\n• Embedded Program™ Algorithms\n   Automatically programs and verifies data at specified address\n• Data Polling and Toggle Bit feature for detection of program or erase cycle completion\n• Ready/Busy output (RY/BY)\n   Hardware method for detection of program or erase cycle completion\n• Low VCC write inhibit ≤ 3.2 V\n• Hardware RESET pin\n   Resets internal state machine to the read mode\n• Erase Suspend/Resume\n   Supports reading or programming data to a sector not being erased\n• Sector group protection\n   Hardware method that disables any combination of sector groups from write or erase operation (a sector group consists of 4 adjacent sectors of 64 K bytes each)\n• Temporary sector groups unprotection\n   Temporary sector unprotection via the RESET pin ;

■ GENERAL DESCRIPTION\nThe MBM29F016A is a 16 M-bit, 5.0 V-Only Flash memory organized as 2 M bytes of 8 bits each. The 2 M bytes of data is divided into 32 sectors of 64 K bytes for flexible erase capability. The 8 bit of data will appear on DQ0 to DQ7. The MBM29F016A is offered in a 48-pin TSOP(I) package. This device is designed to be programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.■ FEATURES\n• Single 5.0 V read, write, and erase\n   Minimizes system level power requirements\n• Compatible with JEDEC-standard commands\n   Pinout and software compatible with single-power supply Flash\n   Superior inadvertent write protection\n• 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)\n• Minimum 100,000 write/erase cycles\n• High performance\n   70 ns maximum access time\n• Sector erase architecture\n   Uniform sectors of 64 K bytes each\n   Any combination of sectors can be erased. Also supports full chip erase.\n• Embedded Erase™ Algorithms\n   Automatically pre-programs and erases the chip or any sector\n• Embedded Program™ Algorithms\n   Automatically programs and verifies data at specified address\n• Data Polling and Toggle Bit feature for detection of program or erase cycle completion\n• Ready/Busy output (RY/BY)\n   Hardware method for detection of program or erase cycle completion\n• Low VCC write inhibit ≤ 3.2 V\n• Hardware RESET pin\n   Resets internal state machine to the read mode\n• Erase Suspend/Resume\n   Supports reading or programming data to a sector not being erased\n• Sector group protection\n   Hardware method that disables any combination of sector groups from write or erase operation (a sector group consists of 4 adjacent sectors of 64 K bytes each)\n• Temporary sector groups unprotection\n   Temporary sector unprotection via the RESET pin

MBM29F016A-12PFTN

16M (2M X 8) BIT

■GENERALDESCRIPTION TheMBM29F016Aisa16M-bit,5.0V-OnlyFlashmemoryorganizedas2Mbytesof8bitseach.The2Mbytesofdataisdividedinto32sectorsof64Kbytesforflexibleerasecapability.The8bitofdatawillappearonDQ0toDQ7.TheMBM29F016Aisofferedina48-pinTSOP(

MBM29F016A-12PFTR

16M (2M X 8) BIT

■GENERALDESCRIPTION TheMBM29F016Aisa16M-bit,5.0V-OnlyFlashmemoryorganizedas2Mbytesof8bitseach.The2Mbytesofdataisdividedinto32sectorsof64Kbytesforflexibleerasecapability.The8bitofdatawillappearonDQ0toDQ7.TheMBM29F016Aisofferedina48-pinTSOP(

MBM29F016A-70

16M (2M X 8) BIT

■GENERALDESCRIPTION TheMBM29F016Aisa16M-bit,5.0V-OnlyFlashmemoryorganizedas2Mbytesof8bitseach.The2Mbytesofdataisdividedinto32sectorsof64Kbytesforflexibleerasecapability.The8bitofdatawillappearonDQ0toDQ7.TheMBM29F016Aisofferedina48-pinTSOP(

MBM29F016A-70PFTN

16M (2M X 8) BIT

■GENERALDESCRIPTION TheMBM29F016Aisa16M-bit,5.0V-OnlyFlashmemoryorganizedas2Mbytesof8bitseach.The2Mbytesofdataisdividedinto32sectorsof64Kbytesforflexibleerasecapability.The8bitofdatawillappearonDQ0toDQ7.TheMBM29F016Aisofferedina48-pinTSOP(

MBM29F016A-70PFTR

16M (2M X 8) BIT

■GENERALDESCRIPTION TheMBM29F016Aisa16M-bit,5.0V-OnlyFlashmemoryorganizedas2Mbytesof8bitseach.The2Mbytesofdataisdividedinto32sectorsof64Kbytesforflexibleerasecapability.The8bitofdatawillappearonDQ0toDQ7.TheMBM29F016Aisofferedina48-pinTSOP(

MBM29F016A-90

16M (2M X 8) BIT

■GENERALDESCRIPTION TheMBM29F016Aisa16M-bit,5.0V-OnlyFlashmemoryorganizedas2Mbytesof8bitseach.The2Mbytesofdataisdividedinto32sectorsof64Kbytesforflexibleerasecapability.The8bitofdatawillappearonDQ0toDQ7.TheMBM29F016Aisofferedina48-pinTSOP(