MB85RS256PNF-G-JNE1资料使用说明书批发采购-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MB85RS256PNF-G-JNE1	文件：273.45 Kbytes Page：19 Pages	Memory FRAM CMOS 256 K (32 K 횞 8) Bit SPI 文件：273.45 Kbytes 页数：19 Pages	Fujitsu 富士通	Fujitsu
MB85RS256PNF-G-JNE1	文件：123.94 Kbytes Page：20 Pages	Memory FRAM CMOS 256 K (32 K 횞 8) Bit SPI 文件：123.94 Kbytes 页数：20 Pages	Fujitsu 富士通	Fujitsu
MB85RS256PNF-G-JN-ERE1	文件：123.94 Kbytes Page：20 Pages	Memory FRAM CMOS 256 K (32 K 횞 8) Bit SPI 文件：123.94 Kbytes 页数：20 Pages	Fujitsu 富士通	Fujitsu
MB85RS256TY	文件：2.42728 Mbytes Page：39 Pages	256K (32 K X 8) Bit SPI DESCRIPTION MB85RS256TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu 文件：2.42728 Mbytes 页数：39 Pages	RAMXEED 富士通	RAMXEED
MB85RS256TYA	文件：2.70662 Mbytes Page：43 Pages	256K (32K X 8) Bit SPI DESCRIPTION MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat 文件：2.70662 Mbytes 页数：43 Pages	RAMXEED 富士通	RAMXEED

更多MB85RS256PN供应商更新时间2025-10-30 9:26:00