MB85RS128BPNF-G-AMERE2中文资料富士通数据手册PDF规格书

DESCRIPTION

MB85RS128B is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

MB85RS128B adopts the Serial Peripheral Interface (SPI).

The MB85RS128B is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS128B can be used for 1012 read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E2PROM.

MB85RS128B does not take long time to write data like Flash memories or E2PROM, and MB85RS128B

takes no wait time.

FEATURES

Bit configuration : 16,384 words  8 bits

Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

Operating frequency : All commands except READ 33 MHz (Max)

READ command 25 MHz (Max)

High endurance : 1012 times / byte

Data retention : 10 years (  85 C), 95 years (  55 C), over 200 years (  35 C)

Operating power supply voltage : 2.7 V to 3.6 V

Low power consumption : Operating power supply current 6 mA (Typ @33 MHz)

Standby current 9 A (Typ)

Operation ambient temperature range :  40 C to  85 C

Package : 8-pin plastic SOP 150mil

RoHS compliant