MB85RC64TAPNF-G-BDE1集成电路（IC）的存储器规格书PDF中文资料

 DESCRIPTION

The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be

at least 1013 cycles, significantly outperforming Flash memory and E2PROM in the number.

The MB85RC64TA does not need a polling sequence after writing to the memory such as the case of Flash

memory or E2PROM.

 FEATURES

• Bit configuration : 8,192 words  8 bits

• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).

• Operating frequency : 3.4 MHz (Max @HIGH SPEED MODE)

1 MHz (Max @FAST MODE PLUS)

• Read/write endurance : 1013 times / byte

• Data retention : 19.1 years (  105 C), 70.4 years (  85 C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power consumption : Operating power supply current 170 A (Typ @3.4 MHz)

Standby current 8 A (Typ)

Sleep current 4 A (Typ)

• Operation ambient temperature range :  40 C to + 105 C

• Package : 8-pin plastic SOP (150mil)

8-pin plastic SON

RoHS compliant