首页 >MB85RC16VPNF-G>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MB85RC16VPNF-G | 16 K (2 K 횞 8) Bit I2C 文件：306.54 Kbytes 页数：29 Pages | FUJITSU 富士通 | FUJITSU | |
16 K (2 K x 8) Bit I2C DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w 文件：2.3944 Mbytes 页数：33 Pages | RAMXEED 富士通 | RAMXEED | ||
16 K (2 K x 8) Bit I2C DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w 文件：2.3944 Mbytes 页数：33 Pages | RAMXEED 富士通 | RAMXEED | ||
16 K (2 K x 8) Bit I2C DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w 文件：2.3944 Mbytes 页数：33 Pages | RAMXEED 富士通 | RAMXEED | ||
16 K (2 K x 8) Bit I2C DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w 文件：2.3944 Mbytes 页数：33 Pages | RAMXEED 富士通 | RAMXEED | ||
16 K (2 K x 8) Bit I2C DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w 文件：2.3944 Mbytes 页数：33 Pages | RAMXEED 富士通 | RAMXEED | ||
16 K (2 K x 8) Bit I2C DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w 文件：2.3944 Mbytes 页数：33 Pages | RAMXEED 富士通 | RAMXEED | ||
16 K (2 K 횞 8) Bit I2C 文件：306.54 Kbytes 页数：29 Pages | FUJITSU 富士通 | FUJITSU | ||
16 K (2 K 횞 8) Bit I2C 文件：306.54 Kbytes 页数：29 Pages | FUJITSU 富士通 | FUJITSU | ||
16 K (2 K 횞 8) Bit I2C 文件：306.54 Kbytes 页数：29 Pages | FUJITSU 富士通 | FUJITSU |
详细参数
- 型号：
MB85RC16VPNF-G
- 功能描述：
IC FRAM 16KBIT 400KHZ 8SOP
- RoHS：
是
- 类别：
集成电路(IC) >> 存储器
- 系列：
-
- 标准包装：
2,500
- 系列：
- 格式 -
- 存储器：
EEPROMs - 串行
- 存储器类型：
EEPROM
- 存储容量：
1K(128 x 8)
- 速度：
100kHz
- 接口：
UNI/O?（单线）
- 电源电压：
1.8 V ~ 5.5 V
- 工作温度：
-40°C ~ 85°C
- 封装/外壳：
8-TSSOP，8-MSOP（0.118，3.00mm 宽）
- 供应商设备封装：
8-MSOP
- 包装：
带卷(TR)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FUJITSU |
25+ |
SOP8 |
6500 |
专注原装芯片21年 一手货源 样品免费送 |
询价 | ||
FUJITSU |
2018+ |
SOP8 |
26976 |
代理原装现货/特价热卖! |
询价 | ||
FUJITSU |
23+ |
SOP8 |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
FujitsuSemiconductorAmer |
23+ |
8-SOP |
1389 |
专业分销产品!原装正品!价格优势! |
询价 | ||
FUJITSU |
24+ |
SOP8 |
5000 |
只做原装公司现货 |
询价 | ||
FUJITSU |
1651+ |
SOP |
7500 |
只做原装进口,假一罚十 |
询价 | ||
FUJITSU |
1136+ |
SOP-8 |
5229 |
原装现货海量库存欢迎咨询 |
询价 | ||
FUJITSU |
24+ |
SOP-8 |
3920 |
原装柜台现货特价热卖 |
询价 | ||
FUJITSU |
18+ |
SOP-8 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
FUJITSU |
20+ |
SOP-8 |
11520 |
特价全新原装公司现货 |
询价 |
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相关库存
更多- MB85RC16VPNF-G-JNN1ERE1
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- MB8S
- MB8U
- MB91F587LBPMC->
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- MB9AF132LBPMC-G-SNE2
- MB9AF156MAPMC-G-JNE2
- MB9AF312KPMC1-G-JNE2
- MB9AF312KQN-G-AVE2
- MB9AF314LAPMC-G-JNE2
- MB9AF314MAPMC-G-JNE2
- MB9AF316MAPMC-G-JNE2
- MB9AF316NAPF-G-JNE1
- MB9AF421KPMC-G-JNE2
- MB9AF421LWQN-G-JNE2
- MB9AFAA2NPMC-G-SNE2
- MB9AFB44NBPMC-G-JNE2
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- MB9BF504RBPMC->
- MB9BF506RBPMC-G-JNE2
