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■ FEATURES
• Power supply voltage of 2.7 to 3.6 V
• High performance
85 ns maximum access time
• Operating Temperature
−25 to +85 °C
• Package 69-ball FBGA, 56-pin TSOP(I)
1. FLASH MEMORY
• Simultaneous Read/Write operations (dual bank)
Miltiple devices available with different bank sizes (Refer to “PIN DESCRIPTION”)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
• Minimum 100,000 write/erase cycles
• Sector erase architecture
Eight 4 K words and thirty one 32 K words.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
MB84VD2118XA : Top sector
MB84VD2119XA : Bottom sector
• Embedded EraseTM* Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low VCCf write inhibit ≤ 2.5 V
• Hidden ROM (Hi-ROM) region
64K byte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin
At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status
(MB84VD2118XA : SA37, SA38 MB84VD2119XA : SA0, SA1)
At VIH, allows removal of boot sector protection
At VACC, program time will reduse by 40.
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Please refer to “MBM29DL16XTD/BD” data sheet in detailed function
2. SRAM
• Power dissipation
Operating : 40 mA max.
Standby : 7 µA max.
• Power down features using CE1s and CE2s
• Data retention supply voltage : 1.5 V to 3.6 V
• CE1s and CE2s Chip Select
• Byte data control : LBs (DQ0 to DQ7) , UBs (DQ8 to DQ15)
产品属性
- 型号:
MB84VD21193-85-PBS
- 制造商:
FUJITSU
- 制造商全称:
Fujitsu Component Limited.
- 功能描述:
16M( x 8/ x 16) FLASH MEMORY & 4M( x 8/ x 16) STATIC RAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FUJITSU/富士通 |
23+ |
NA/ |
330 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
FUJITSU/富士通 |
2022 |
BGA |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
FUJ |
2016+ |
BGA |
6528 |
只做原厂原装现货!终端客户个别型号可以免费送样品! |
询价 | ||
FUJITSU/富士通 |
QFP |
98900 |
原厂集团化配单-有更多数量-免费送样-原包装正品现货- |
询价 | |||
FUJITSU |
23+ |
NA |
119 |
专做原装正品,假一罚百! |
询价 | ||
FUJI |
22+ |
BGA |
3000 |
原装正品,支持实单 |
询价 | ||
FUJ |
BGA |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
FUJITSU/富士通 |
23+ |
QFP |
96880 |
只做原装,欢迎来电资询 |
询价 | ||
FUJITSU |
2020+ |
QFP |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
FUJITSU/富士通 |
23+ |
QFP |
98900 |
原厂原装正品现货!! |
询价 |