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MB84VD21182-85-PBS中文资料PDF规格书
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MB84VD21182-85-PBS规格书详情
■ FEATURES
• Power supply voltage of 2.7 to 3.6 V
• High performance
85 ns maximum access time
• Operating Temperature
−25 to +85 °C
• Package 69-ball FBGA, 56-pin TSOP(I)
1. FLASH MEMORY
• Simultaneous Read/Write operations (dual bank)
Miltiple devices available with different bank sizes (Refer to “PIN DESCRIPTION”)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
• Minimum 100,000 write/erase cycles
• Sector erase architecture
Eight 4 K words and thirty one 32 K words.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
MB84VD2118XA : Top sector
MB84VD2119XA : Bottom sector
• Embedded EraseTM* Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low VCCf write inhibit ≤ 2.5 V
• Hidden ROM (Hi-ROM) region
64K byte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin
At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status
(MB84VD2118XA : SA37, SA38 MB84VD2119XA : SA0, SA1)
At VIH, allows removal of boot sector protection
At VACC, program time will reduse by 40.
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Please refer to “MBM29DL16XTD/BD” data sheet in detailed function
2. SRAM
• Power dissipation
Operating : 40 mA max.
Standby : 7 µA max.
• Power down features using CE1s and CE2s
• Data retention supply voltage : 1.5 V to 3.6 V
• CE1s and CE2s Chip Select
• Byte data control : LBs (DQ0 to DQ7) , UBs (DQ8 to DQ15)
产品属性
- 型号:
MB84VD21182-85-PBS
- 制造商:
FUJITSU
- 制造商全称:
Fujitsu Component Limited.
- 功能描述:
16M( x 8/ x 16) FLASH MEMORY & 4M( x 8/ x 16) STATIC RAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FUJI |
22+ |
BGA |
3000 |
原装正品,支持实单 |
询价 | ||
FUJITSU/富士通 |
2023+ |
BGA |
8635 |
一级代理优势现货,全新正品直营店 |
询价 | ||
FUJISTU |
2016+ |
NP |
4558 |
只做进口原装现货!假一赔十! |
询价 | ||
HYNIX |
20+ |
BGA |
35200 |
原装现货/放心购买 |
询价 | ||
FUJITSU/富士通 |
NP |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
FUJITSU |
BGA |
90000 |
公司集团化配单-有更多数量-免费送样-原包装正品现货- |
询价 | |||
FUJITSU/富士通 |
2122+ |
NP |
9890 |
全新原装进口,优势渠道,价格美丽,可出样品来电咨询 |
询价 | ||
FUJITSU/富士通 |
23+ |
BGA |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
3000 |
公司现货 |
询价 | |||||
FujitsuSemic |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |