15A Single-Phase Glass Passivated Bridge Rectifier

Features • Glass passivated chip junction • Low Reverse Leakage Current • Low Power Loss, High Efficiency • Electrically Isolated Metal Case for Max. Heat Dissipation • Case to Terminal Isolation Voltage 2500V • This series is UL recognized under component index, File number E194718 • RoHS

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TAITRON

N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

文件：161.75 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th

文件：94.17 Kbytes 页数：16 Pages

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th

文件：94.17 Kbytes 页数：16 Pages

NEC

瑞萨