R6025JNZ

Nch600V25APowerMOSFET

Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switching

REF6025

High-PrecisionVoltageReferenceWithIntegratedADCDriveBuffer

REF6025IDGKR

High-PrecisionVoltageReferenceWithIntegratedADCDriveBuffer

REF6025IDGKT

High-PrecisionVoltageReferenceWithIntegratedADCDriveBuffer

RJK6025DPD

600V-1A-MOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=13.5±typ.(atID=0.5A,VGS=10V,Ta=25°C) •Lowdrivecurrent •Highdensitymounting

RJK6025DPD

N-Channel650V(D-S)MOSFET

RJK6025DPD

N-ChannelMOSFETusesadvancedtrenchtechnology

RJK6025DPE

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=13Ωtyp.(atID=0.4A,VGS=10V,Ta=25°C) •Lowleakagecurrent •Highspeedswitching

RJK6025DPE

600V-0.8A-MOSFETHighSpeedPowerSwitching

RX6025SAS

ExpansionunitRX6025sas

Highlights •On-The-FlyInstallation Addupto60additional3.5SynologySASHDDsor2.5 SynologySATASSDswithminimalsetupanddisruption2 •SimpleConfiguration LeveragenewstorageinminutesusingSynologyDSM’s unifiedtools •ServiceAvailabilitySafeguards Redundantcomponentsa