SI8901EDB

Bi-DirectionalP-Channel20-V(D-S)MOSFET

SI8901EDB

Bi-DirectionalP-Channel20-V(D-S)MOSFET

SI8901EDB

Bi-DirectionalP-Channel20-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •Ultra-LowRSS(on) •ESDProtected:6000V •MICROFOOT®ChipscalePackaging ReducesFootprintArea,Profile(0.65mm) andOn-ResistancePerFootprintArea APPLICATIONS •SmartBatteriesforPortableDevices

TLWR8901

TELUXLED

DESCRIPTION TheTELUXseriesisaclear,nondiffusedLEDfor applicationswheresupremeluminousfluxisrequired. Itisdesignedinanindustrystandard7.62mmsquare packageutilizinghighlydevelopedAllnGaPtechnology. ThesupremeheatdissipationofTELUXallowsapplications athigha

TLWR8901

TELUXLED

TLWR8901

LEDsforAutomotiveandOutdoorApplications

High-performanceVishayTELUXLEDsfeatureafullcolorrangeofdeviceswithawideviewingangleandhighluminousflux. APPLICATIONS • Automotive    –Brakelights    –Taillights    –Turnsignals • Outdoors    –Traffcsignals    –Messagepanels    –Warninglights

TMF8901B

SiRFLDMOSTransistor

□Features -Powergain GP=12.4dBatVDS=4.5V,IDset=200mA,f=470MHz GP=14.7dBatVDS=6.0V,IDset=200mA,f=470MHz -Outputpower POUT=32.4dBmatVDS=4.5V,IDset=200mA,f=470MHz POUT=34.7dBmatVDS=6.0V,IDset=200mA,f=470MHz -Drai

TMF8901F

SiRFLDMOSTransistor

□Features -Powergain GP=12.5dBatVDS=4.5V,IDset=200mA,f=470MHz -Outputpower POUT=32dBmatVDS=4.5V,IDset=200mA,f=470MHz -Drainefficiency ηD=60(typ.) □Applications -VHFandUHFwidebandamplifier

TPCP8901

TOSHIBATransistorSiliconNPN/PNPEpitaxialType(PCTProcess)

PortableEquipmentApplications SwitchingApplications •Smallfootprintduetosmallandthinpackage •HighDCcurrentgain:PNPhFE=200to500(IC=−0.1A) :NPNhFE=400to1000(IC=0.1A) •Lowcollector-emittersaturation:PNPVCE(sat)=−0.

TPCP8901

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf