首页 >MAX4951CTP+TS>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
EyeDiagramTestCircuitwithSMAInputs/Outputs | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
EyeDiagramTestCircuitwithSMAInputs/Outputs | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
SUPERLOWNOISEInGaAsHEMT DESCRIPTION TheMGF4951A/MGF4952Asuper-lownoiseHEMT(HighElectronMobilityTransistor)isdesignedforuseinCtoKbandamplifiers.Thelead-lessceramicpackageassuresminimumparasiticlosses. FEATURES Lownoisefigure@f=12GHz MGF4951A:NFmin.=0.40dB(Typ.) MGF495 | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
SUPERLOWNOISEInGaAsHEMT | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
SUPERLOWNOISEInGaAsHEMT DESCRIPTION TheMGF4951A/MGF4952Asuper-lownoiseHEMT(HighElectronMobilityTransistor)isdesignedforuseinCtoKbandamplifiers.Thelead-lessceramicpackageassuresminimumparasiticlosses. FEATURES Lownoisefigure@f=12GHz MGF4951A:NFmin.=0.40dB(Typ.) MGF495 | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
SurgeClamping,TransientOvervoltageSuppressorBidirectional Description: TheNTE4900seriesofsiliconTransientSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighenergyvoltagetransients.Transientovervoltagesuppressordeviceshavebecomeveryimportantasaconsequenceoftheirhighsurgecapability,extremelyfastresponsetime | NTE NTE Electronics | NTE | ||
DualN-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DualN-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SingleN?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SingleN?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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